| PART |
Description |
Maker |
| KTC3878 KTC3883 |
TRIPLE DIFFUSED PNP TRANSISTOR(HIGH FREQUENCY/ VHF BAND AMPLIFIER)
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, HF, VHF AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| BGY43 |
VHF power amplifier module
|
NXP Semiconductors
Philips Semiconductors
|
| S-AV36A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 80-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| MAX2630 MAX2630EUS-T MAX2630-MAX2633 MAX2631EUK-T |
VHF-to-Microwave, 3V, General-Purpose Amplifiers 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
"VHF to Microwave, 3V, General-Purpose Amplifiers"
VHF-to-Microwave, 3V,General-Purpose Amplifiers
VHF-to-Microwave 3V General-Purpose Amplifiers
VHF-to-Microwave / 3V / General-Purpose Amplifiers
|
Maxim Integrated Products, Inc.
Maixm
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| 2SC2178 |
VHF Band Power Amplifier Applications
|
Toshiba Semiconductor
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| 55410 NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Laboratories
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| S-AV28 |
VHF Band HAM FM RF Power Amplifier Module
|
Toshiba
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
